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METHOD OF USING HYDROGEN AND OXYGEN GAS IN SPUTTER DEPOSITION OF ALUMINUM-CONTAINING FILMS AND ALUMINUM-CONTAINING FILMS DERIVED THEREFROM
METHOD OF USING HYDROGEN AND OXYGEN GAS IN SPUTTER DEPOSITION OF ALUMINUM-CONTAINING FILMS AND ALUMINUM-CONTAINING FILMS DERIVED THEREFROM
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机译:在含铝膜和衍生自含铝膜的溅射沉积中使用氢气和氧气的方法
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摘要
Aluminum-containing films (134) include an oxygen content within the films. The aluminum-containing films are formed by introducing hydrogen gas with argon or hydrogen gas/oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate (122). The aluminum-containing films so formed are hillock-free and have low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
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