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Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
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机译:在含铝膜和由其衍生的含铝膜的溅射沉积中使用氢气和氧气的方法
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摘要
Aluminum-containing films (134) include an oxygen content within the films. The aluminum-containing films are formed by introducing hydrogen gas with argon or hydrogen gas/oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate (122). The aluminum-containing films so formed are hillock-free and have low resistitivy, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
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