The present invention relates to a process for the production of a composition to be polished silicon and silicon nitride on a semiconductor substrate. The method comprises: - the provision of a carboxylic acid polymer in an aqueous solution; - the contact of the aqueous solution with an ion exchange resin in order to remove the cations which are soluble and the ammonia that is soluble in the aqueous solution, the aqueous solution, providing a polymer of the carboxylic acid having undergone an exchange of ions in an aqueous solution; - the addition or the addition (i) an abrasive, (ii) of a quaternary ammonium compound and (iii) of phthalic acid or a salt of phthalic acid to the polymer of the carboxylic acid having undergone an exchange of ions in an aqueous solution in order to obtain a suspension having 0,01 to 5% by weight of the polymer of the carboxylic acid having undergone an ion exchange, 0,001 to 1% by weight of the quaternary ammonium compound, 0,001 to 1% by weight of phthalic acid or salt of phthalic acid and 0,01 to 5% by weight of abrasive.
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