Thin monocrystalline or polycrystalline semiconductor substrate e.g. silicon on insulator substrate, manufacturing device for e.g. MOSFET, has roller exerting tension on stiffener and thin sheets to ensure separation of thin sheet

摘要

The device has an electrostatic accelerator (3) for implanting an ion e.g. helium, with an appropriate energy at a depth (epsilon) in a separation layer (15), and a fixation unit for fixing a stiffener sheet (9) on a surface of a monocrystalline or polycrystalline semiconductor material source e.g. parallelepiped shaped crystalline ingot (1). A motorized roller (4) drives the stiffener sheet and a thin monocrystalline or polycrystalline sheet (8) at a controlled speed and exerts a tension (T) on the sheets to ensure separation of the thin sheet (8) with respect to the ingot.