首页> 外国专利> PHOTOVOLTAIC DEVICE WITH DISCONTINUOUS INTERDIGITED HETEROJUNCTION STRUCTURE

PHOTOVOLTAIC DEVICE WITH DISCONTINUOUS INTERDIGITED HETEROJUNCTION STRUCTURE

机译:具有不连续交错异质结结构的光电器件

摘要

The invention relates to a photovoltaic device (100), comprising: - a substrate based on a crystalline semiconductor material, - a first electrode comprising at least one heterojunction made on one side, called the rear face, of the substrate, this heterojunction having a layer (104) based on a doped amorphous semiconductor material, - a second electrode.The first and second electrodes are disposed on the back side of the substrate in a pattern of interdigitated combs, and the layer (104) having a plurality of portions of the doped amorphous semiconductor material separate and spaced from one another.
机译:本发明涉及一种光伏器件(100),其包括:-基于晶体半导体材料的衬底;-第一电极,其包括在衬底的称为背面的一侧上制成的至少一个异质结,该异质结具有基于掺杂的非晶半导体材料的层(104),第二电极。第一电极和第二电极以叉指状梳状的图案设置在基板的背面,并且层(104)具有多个部分掺杂的非晶半导体材料彼此分离且间隔开。

著录项

  • 公开/公告号FR2914501A1

    专利类型

  • 公开/公告日2008-10-03

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR20070054107

  • 发明设计人 ARMAND BETTINELLI;THIBAUT DESRUES;

    申请日2007-03-28

  • 分类号H01L31/042;H01L31/0747;H01L31/20;

  • 国家 FR

  • 入库时间 2022-08-21 19:47:01

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