THREE-LAYERED STACKED MAGNETIC SPIN POLARIZATION DEVICE WITH MEMORY FUNCTION, AND MEMORY ELEMENT USING DEVICE

摘要

PROBLEM TO BE SOLVED: To decrease a critical value at which magnetism of a free layer of a magnetic spin polarization device is inverted.;SOLUTION: Disclosed are a three-layered magnetic spin polarization device and a device using the same. According to the invention, the device includes a three-layered stack (16) which constitutes the free magnetic layer. The three-layer stack consists of a nonmagnetic conductive layer (162) and two magnetic layers (161, 163) separated by the nonmagnetic conductive layer. The stack does not include a demagnetizing field, which reduces the critical writing density. The trapped layer may, itself, consist of a triple layer (12). The device is applicable to a magnetic memory element.;COPYRIGHT: (C)2010,JPO&INPIT