首页> 外国专利> METHOD OF REPAIRING DAMAGED LOW-DIELECTRIC CONSTANT SILICA-BASED FILM AND LOW-DIELECTRIC-CONSTANT SILICA-BASED FILM RESTORED BY THE SAME

METHOD OF REPAIRING DAMAGED LOW-DIELECTRIC CONSTANT SILICA-BASED FILM AND LOW-DIELECTRIC-CONSTANT SILICA-BASED FILM RESTORED BY THE SAME

机译:修复受损的低介电常数二氧化硅基薄膜和由其还原的低介电常数二氧化硅基薄膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a method of repairing a low-dielectric-constant silica-based film which is given a chemical damage by a cleaning liquid used for the purpose of removing residue such as a silica-based denatured substance produced during etching of a low-dielectric-constant silica-based film or a resist decomposed substance produced during ashing, or removing residue such as polishing waste produced during CMP processing.;SOLUTION: The method of repairing a low-dielectric-constant silica-based film is used to store in a container a substrate or a device which has a chemically damaged low-dielectric-constant silica-based film, introduce overheated steam into the container and heat the low-dielectric-constant silica-based film, thereby, the damaged low-dielectric-constant silica-based film is repaired.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种修复低介电常数二氧化硅基薄膜的方法,该薄膜会受到清洁液的化学破坏,该清洁液用于去除残留物,例如在蚀刻过程中产生的二氧化硅基变性物质。低介电常数二氧化硅基薄膜或灰化过程中产生的抗蚀剂分解物质,或去除CMP处理过程中产生的诸如抛光废料之类的残留物;解决方案:使用修复低介电常数二氧化硅基薄膜的方法将具有化学损坏的低介电常数二氧化硅基薄膜的基板或设备存储在容器中,将过热的蒸汽引入容器中并加热低介电常数的二氧化硅基薄膜,从而使受损的低介电常数修复了介电常数二氧化硅基薄膜。;版权所有:(C)2009,日本特许厅&INPIT

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