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METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LASER, AND NITRIDE-BASED SEMICONDUCTOR LASER
METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LASER, AND NITRIDE-BASED SEMICONDUCTOR LASER
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机译:制造基于氮化物的半导体激光器的方法以及基于氮化物的半导体激光器
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摘要
PROBLEM TO BE SOLVED: To provide: a method of manufacturing a nitride-based semiconductor laser which replaces local impurity diffusion carried out so far for such materials that an impurity is not easily diffused like nitride-based semiconductor materials, for example, GaAlAs-based and AlGaInP-based materials, the manufacturing method being effective, good in precision, and suitable for mass production; and nitride-based semiconductor laser manufactured by the manufacturing method.;SOLUTION: The method of manufacturing the nitride-based semiconductor laser includes a stage of preparing a substrate having an MQW active layer 4 formed of a nitride semiconductor containing In, a stage of selectively irradiating a light projection end surface of an MQW active layer 4 or a part nearby where the light projection end surface is expected to be formed, and a stage of performing a heat treatment thereafter.;COPYRIGHT: (C)2009,JPO&INPIT
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