DISLOCATION DETECTING METHOD IN SILICON CARBIDE SEMICONDUCTOR WAFER, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To detect a dislocation in a silicon carbide semiconductor wafer by a little work increase during a device process.;SOLUTION: The silicon carbide semiconductor wafer 3 whose principal plane is (0001) Si surface in general is used for depositing a polycrystalline silicon 12 after forming a thermal oxidation film 11. On a front surface thereof, a hillock 20 is produced corresponding to a dislocation 64 in the wafer. The dislocation 64 is detected by carrying out an image processing of a scattered light of a laser for this hillock 20.;COPYRIGHT: (C)2009,JPO&INPIT