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SURFACE WORKING METHOD FOR DISCHARGE PLASMA PROCESSING APPARATUS, APPLICATION ELECTRODE, AND DISCHARGE PLASMA PROCESSING APPARATUS

机译:放电等离子体处理装置的表面工作方法,应用电极和放电等离子体处理装置

摘要

PROBLEM TO BE SOLVED: To provide a surface working method of a discharge plasma processing apparatus, an application electrode and a discharge plasma processing apparatus for achieving highly precise flattening by a one-time operation process, thereby improving the efficiency of working.;SOLUTION: Discharge plasma P forms hollow discharge plasma Ph and grow discharge plasma Pg. A processing face 14a of the substrate 14 is deeply dug by the hollow discharge plasma Ph formed at the central part of the discharge plasma P. In this case, the protrusion of the irregularities formed on a processing face 14a of the substrate 14 by digging by the hollow discharge plasma Ph is etched by glow discharge plasma Pg formed in the outer periphery of the hollow discharge plasma Ph so that the highly precise substrate is flattened. Also, the discharge plasma P simultaneously forms the hollow discharge plasma Ph and the glow discharge Pg, and the substrate 14 is synchronously etched.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种放电等离子体处理装置的表面加工方法,施加电极和放电等离子体处理装置,以通过一次操作工序实现高精度的平坦化,从而提高了工作效率。放电等离子体P形成中空放电等离子体Ph并生长出放电等离子体Pg。基板14的处理面14a被在放电等离子体P的中央部形成的中空的放电等离子体Ph深挖。在这种情况下,通过挖削形成在基板14的处理面14a上的凹凸的突起。中空放电等离子体Ph被形成在中空放电等离子体Ph的外周的辉光放电等离子体Pg蚀刻,从而高精度的基板被平坦化。而且,放电等离子体P同时形成空心放电等离子体Ph和辉光放电Pg,并且基板14被同步蚀刻。;版权所有:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2009260206A

    专利类型

  • 公开/公告日2009-11-05

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20080188713

  • 发明设计人 UEDA SHINICHI;

    申请日2008-07-22

  • 分类号H01L21/3065;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 19:44:09

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