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Plasma processing apparatus, and a method for processing a substrate using an atmospheric pressure glow discharge electrode configuration
Plasma processing apparatus, and a method for processing a substrate using an atmospheric pressure glow discharge electrode configuration
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机译:等离子处理装置以及使用大气压辉光放电电极结构的基板的处理方法
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摘要
Plasma treatment apparatus for treating a substrate (6, 7) e.g. for deposition of a layer on the substrate (6, 7). Two opposing electrodes (2, 3) and a treatment space (5) are provided. A dielectric barrier (6, 7; 2a, 3a), comprising in operation the substrate, is provided in the treatment space (5) between the at least two opposing electrodes (2, 3) which are connected to a plasma control unit (4). A gap distance (g) is the free distance in the treatment space (5) of a gap between the at least two opposing electrodes (2, 3) in operation. A total dielectric distance (d) is the sum of the dielectric thickness of the dielectric layers (2a, 3a) and the substrate (6, 7). The product of gap distance (g) and total dielectric distance (d) is controlled to a value less than or equal to 1.0 mm 2 .
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