首页> 外国专利> PLASMA TREATMENT APPARATUS AND METHOD FOR TREATMENT OF A SUBSTRATE WITH ATMOSPHERIC PRESSURE GLOW DISCHARGE ELECTRODE CONFIGURATION

PLASMA TREATMENT APPARATUS AND METHOD FOR TREATMENT OF A SUBSTRATE WITH ATMOSPHERIC PRESSURE GLOW DISCHARGE ELECTRODE CONFIGURATION

机译:等离子体处理装置和用大气压力辉光放电电极构型处理基质的方法

摘要

Plasma treatment apparatus and method for treating a substrate (6, 7) e.g. for deposition of a layer on the substrate (6, 7). Two opposing electrodes (2, 3) and a treatment space (5) are provided. A dielectric barrier (6, 7; 2a, 3a), comprising in operation the substrate, is provided in the treatment space (5) between the at least two opposing electrodes (2, 3) which are connected to a plasma control unit (4). A gap distance (g) is the free distance in the treatment space (5) of a gap between the at least two opposing electrodes (2, 3) in operation. A total dielectric distance (d) is the sum of the dielectric thickness of the dielectric layers (2a, 3a) and the substrate (6, 7). The product of gap distance (g) and total dielectric distance (d) is controlled to a value less than or equal to 1.0 mm2.
机译:等离子体处理设备和用于处理衬底( 6,7 )的方法,例如用于在基板上沉积一层( 6,7 )。提供两个相对的电极( 2、3 )和治疗空间( 5 )。在操作中包括衬底的介质阻挡层( 6,7; 2 a, 3 a )是设置在至少两个相对的电极( 2、3 )之间的处理空间( 5 )中,该两个电极与等离子控制单元( 4 >)。间隙距离(g)是在操作中至少两个相对电极( 2、3 )之间的间隙在治疗空间( 5 )中的自由距离。总介电距离(d)是介电层( 2 a, 3 a )和底物( 6,7 )。间隙距离(g)与总介电距离(d)的乘积被控制为小于或等于1.0 mm 2

著录项

  • 公开/公告号US2011014424A1

    专利类型

  • 公开/公告日2011-01-20

    原文格式PDF

  • 申请/专利权人 HINDRIK WILLEM DE VRIES;

    申请/专利号US20090735821

  • 发明设计人 HINDRIK WILLEM DE VRIES;

    申请日2009-02-10

  • 分类号C23C16/00;C23C16/44;C23C16/513;B32B3/00;

  • 国家 US

  • 入库时间 2022-08-21 18:14:20

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