VAPOR-PHASE PROCESSING APPARATUS, VAPOR-PHASE PROCESSING METHOD, AND SUBSTRATE THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a vapor-phase processing apparatus and method that homogeneously performs processing with less defects on the processing surface of the target.;SOLUTION: The vapor-phase processing apparatus 1 includes a processing chamber 4 for circulating a reaction gas, gas inlets (gas supply ports 13), and rectifying plates 20. A plurality of such gas inlets are formed in an upper wall 6 of the processing chamber 4 along a reaction-gas flowing direction (shown by arrows 11, 12). The rectifying plates 20 are formed so as to cover the gas inlets within the processing chamber 4. Each of the rectifying plates 20 guides a purge gas supplied from the associated gas inlet into the processing chamber such that the purge gas flows along the reaction-gas flowing direction. The rectifying plates 20 are formed to the upper wall 6 of the processing chamber 4 having the gas inlets formed therein so as to be extended in their width directions intersected by the reaction-gas flowing direction.;COPYRIGHT: (C)2009,JPO&INPIT