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Vapor-phase process apparatus, vapor-phase process method, and substrate

机译:气相处理装置,气相处理方法及基板

摘要

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
机译:获得即使在进行不同类型的处理时也能够令人满意地保持处理质量的气相处理设备和气相处理方法。气相处理装置包括处理室,用作多个气体导入部的气体供给口,以及气体供给部(气体供给部件,配管,流量控制装置,配管以及缓冲室)。 )。处理室允许反应气体在其中流动。多个气体供给口沿着反应气体的流动方向形成在处理室的壁面(上壁)中。气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口的流量不同的流量向处理室供给气体。

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