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EVAPORATION SOURCE FOR ARC ION PLATING DEVICE AND ARC ION PLATING DEVICE

机译:ARC离子镀膜设备和ARC离子镀膜设备的蒸发源

摘要

PROBLEM TO BE SOLVED: To provide an evaporation source for an arc ion plating device, wherein the utilization efficiency of a cathode is drastically enhanced and a thin film having high surface smoothness and small residual stress is formed.;SOLUTION: The evaporation source 1 for the arc ion plating device is provided with a magnetic field forming means 5 having a ring-shaped magnet 3 provided around the outer periphery of the cathode 2 and also having a solenoid coil 4 provided on the rear surface of the cathode 2. The magnetic field forming means 5 is constructed so that the direction of the polarity of the ring-shaped magnet 3 is opposite to that of the solenoid coil 4, and forms a magnetic field in which the minimum value of the magnetic flux density on an optional line extending from the center toward the peripheral edge of an evaporation surface for evaporating a substance forming the cathode 2 is ≥45 Gauss and the average value of the magnetic flux densities is ≥80 Gauss.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种用于电弧离子镀装置的蒸发源,其中,阴极的利用效率大大提高,并且形成了具有高表面光滑度和较小残余应力的薄膜。电弧离子镀装置具有磁场形成装置5,该磁场形成装置5在阴极2的外周设置有环状的磁铁3,并且在阴极2的背面设有电磁线圈4。形成装置5构造成使得环形磁体3的极性方向与螺线管线圈4的极性方向相反,并且形成磁场,其中在从任意位置延伸的可选线上的磁通密度的最小值用于蒸发形成阴极2的物质的蒸发表面的朝向圆周边缘的中心为45高斯,磁通密度的平均值为80高斯。版权所有:(C)2009,日本特许厅&INPIT

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