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EVAPORATION SOURCE FOR ARC ION PLATING DEVICE AND ARC ION PLATING DEVICE

机译:ARC离子镀膜设备和ARC离子镀膜设备的蒸发源

摘要

An evaporation source for an arc ion plating device, in which the utilization efficiency of the cathode is drastically enhanced and which forms on a target object a thin film having high surface smoothness and small residual stress. An evaporation source (1) for an arc ion plating device has magnetic field forming means (5) having a ring-shaped magnet (3) provided around the outer periphery of the cathode (2) and also having a solenoid coil (4) provided to the rear surface of the cathode (2). The magnetic field forming means (5) is adapted such that the direction of the polarity of the ring-shaped magnet (3) is opposite to that of the solenoid coil (4), and the magnetic field forming means (5) forms a magnetic field in which the minimum value of the magnetic flux densities on any line extending from the center toward the peripheral edge of an evaporation surface for evaporating a substance forming the cathode (2) is 45 Gauss or above and the average value of the magnetic flux densities is 80 Gauss or above.
机译:用于电弧离子镀装置的蒸发源,其中阴极的利用效率大大提高并且在目标物体上形成具有高表面光滑度和小的残余应力的薄膜。用于电弧离子镀装置的蒸发源(1)具有磁场形成装置(5),该磁场形成装置(5)具有围绕阴极(2)的外周设置的环形磁体(3)并且还具有电磁线圈(4)。阴极(2)的背面。磁场形成装置(5)适于使环形磁铁(3)的极性方向与螺线管线圈(4)的极性相反,并且磁场形成装置(5)形成磁场。从用于蒸发形成阴极(2)的物质的蒸发表面的中心朝向周缘的任何一条线上的磁通密度的最小值为45高斯以上且磁通密度的平均值的场是80高斯或以上。

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