Control of the formation of oxygen clusters aggregation and point defects induced from a silicon single crystal-side surface of the CZ growth during

摘要

Method of manufacturing a single crystal silicon ingot, the invention relates to a wafer obtained therefrom and the ingots. In one embodiment, in a given segment of the ingot, the method, the ratio v, growth and a speed v, the fixes and average axial temperature gradient _{G corrected} or effective average axial temperature gradient _{G effective} respectively defined in the present invention / _{It v / G corrected} or _G effective is controlled to be substantially close to the critical value thereof for a substantial portion of the radius of the segment, during and up to about 1250 ℃ from (i) solidification temperature ( in a temperature range between about 1000 ℃ ii) and about 1250 ℃, can be controlled to manipulate the effect of lateral containment of the intrinsic point defects therein, the cooling rate of the segment, whereby the ingot segment It involves limiting that ring extending radially inwardly from the side surface substantially oxygen precipitation clusters and agglomerated intrinsic point defects and / or to produce. In an embodiment of this or other aspects, so as to limit that to the ring, oxygen precipitation and clusters agglomerated intrinsic point defects and / or to produce, to control the melt / solid interface and the axial temperature gradient or /.