Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation

摘要

The oxygen precipitation in high purity CZ-silicon for ULSI is investigated with regard to the LO-HI and HI-LO-HI annealing processes used for denuded zone formation. The precipitation can be treated as a stochastic phenomenon and described using the chemical Rate Equations (RE) for small precipitates and Fokker-Planck Equation (FPE) for larger size domain. These key equations are connected to the point defect continuity equations (CE). The latter describe the depth and time dependency of the point defect concentrations inside the wafer. This paper presents a robust, stable and accurate numerical simulation of oxygen precipitation and annihilation in silicon. The main parameter, precipitate size distribution, is calculated as a function of depth and time. A C~(++) parallel program was developed and implemented on the Cray T3E Scalable Parallel Computer. MPI message passing interface was used for the inter-processor communication. The simulation results are compared to the experimental data obtained by FTIR~1 and OPP~2 measurement.