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MANUFACTURING METHOD OF THIN-FILM TYPE SEMICONDUCTOR SENSOR, AND THIN-FILM TYPE SEMICONDUCTOR SENSOR

机译:薄膜型半导体传感器的制造方法以及薄膜型半导体传感器

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film type semiconductor sensor capable of manufacturing the thin-film type semiconductor sensor having a membrane having improved mechanical strength, and the thin-film type semiconductor sensor.;SOLUTION: This method has a stopper film formation process for forming a thermal oxidation film 30 on the upper surface of a semiconductor substrate 10 prepared in a preparation process; the first etching process for forming a recessed part 30b by etching the semiconductor substrate 10 from the under surface 11 side by using an etching mask 20 formed in an etching mask formation process; and the second etching process for etching the semiconductor substrate 10 and the thermal oxidation film 30 by using etching liquid wherein the etching rate ratio between the semiconductor substrate 10 and the thermal oxidation film 30 is set at 2:1 and an etching mask 20, and thereby forming the end T of a flat surface 30c on the recessed part 30b side on the thermal oxidation film 30 to have a tapered shape in the sideward cross-sectional view tilted at a fixed gradient toward the under surface 11 side of the semiconductor substrate 10, to thereby acquire the membrane 30a from the thermal oxidation film 30.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种能够制造具有提高了机械强度的膜的薄膜型半导体传感器的薄膜型半导体传感器的制造方法;以及解决方案:该方法具有用于在制备过程中制备的半导体衬底10的上表面上形成热氧化膜30的停止膜形成过程;通过使用在蚀刻掩模形成工序中形成的蚀刻掩模20,从下表面11侧对半导体基板10进行蚀刻,从而形成凹部30b的第一蚀刻工序。第二蚀刻工艺,其通过使用蚀刻液蚀刻半导体衬底10和热氧化膜30,其中半导体衬底10和热氧化膜30之间的蚀刻速率比设定为2:1,并且蚀刻掩模20;以及由此,在热氧化膜30上的凹部30b侧的平坦面30c的端部T在侧面剖视图中形成为以朝向半导体基板10的下表面11侧以一定的梯度倾斜的锥状。 ,从而从热氧化膜30获得膜30a 。;版权所有:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP2009031066A

    专利类型

  • 公开/公告日2009-02-12

    原文格式PDF

  • 申请/专利权人 DENSO CORP;

    申请/专利号JP20070193827

  • 发明设计人 SUZUI KEISUKE;ABE RYUICHIRO;

    申请日2007-07-25

  • 分类号G01F1/692;H01L21/306;B81C1/00;

  • 国家 JP

  • 入库时间 2022-08-21 19:43:29

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