Low the plasma induced electricity etching method of including the reverse side polymer removal of in saichiyu of the permittivity material

摘要

Plasma etching process of reverse side polymer removal with in saichiyu porocity or the non porous carbon is started with the silicon dioxide dielectric layer which is doped and the work piece which possesses the photoresist mask on the surface. The work piece is clamped on the electrostatic chuck in the etching reactor chamber. It introduces the fluoro - carbon based process gas into this process, it etches the part where in the electrostatic chuck, impressing RF source electric power in the overhead electrode, dielectric layer exposes RF bias electric power, on the one hand, accumulating the protective fluoro - carbon polymer on the photoresist mask is included. The fluoro - carbon based process gas is removed in this process, the hydrogen based process gas is introduced, impressing RF source electric power in the overhead electrode furthermore is included. Extending the lift pin of the electrostatic chuck, the polymer which on the electrostatic chuck until it rises, exposes the reverse side of the work piece in the plasma of the reactor chamber, the polymer is removed from reverse side, on reverse side accumulates the work piece in the past is restored.