INFRARED RADIATION DETECTOR AND SOLID STATE IMAGING ELEMENT EQUIPPED WITH INFRARED RADIATION DETECTOR

摘要

PROBLEM TO BE SOLVED: To enable manufacture of an infrared radiation detector at low cost which efficiently absorbes infrared rays incident on a cell.;SOLUTION: The infrared radiation detector includes a semiconductor substrate 2, a reading wiring part 27 provided on the semiconductor substrate, support structure parts 12a, 12b which are disposed above a concave part 14 formed on the surface part of the semiconductor substrate, and have connecting wirings 121a, 121b connected electrically to the reading wiring part, and a cell part 10 which is disposed above the concave part and is supported by the support structure part. The cell part includes an infrared ray absorption layer 101 which absorbs the incident infrared ray, a plurality of thermoelectric conversion elements 11a, 11b which are connected electrically to the support structure part, insulating electrically from the infrared ray absorption layer, detecting the temperature change in the cell part, and forming the electric signal. Each of the plurality of the thermoelectric conversion elements includes a semiconductor layer 5, p-type silicon layers 110a, 110b and n-type silicon layers 111a, 111b which are formed separately from the semiconductor layer, polysilicon layers 112a, 112b which are formed on the semiconductor layer between the p-type silicon layer and the n-type silicon layer.;COPYRIGHT: (C)2010,JPO&INPIT