As ion implantation step is had, the field conservation from the ion was possessed, the mannered null silicon substrate in order consists of the especially semiconductor film,

摘要

(57) Abstract This invention is something regarding the method in order to obtain the thin film from the baseplate. As for the thin film, in inside the baseplate, with ion implantation, in addition, the break line in order to separate the thin film from the remainder of the baseplate is stipulated by the heat treatment which is induced. For example the grid oxide membrane (15) of the MOS transistor (12) and, being the territory of the kind of specification consisting of the channel territory (19), to protect from ion implantation with the masking by the transistor grid (16), it is possible the specific territory which is already formed on the baseplate territory (20) in order to form the thin film (20). If this, the specific territory does not exceed specified limited size vis-a-vis the material which forms the baseplate, there are no times when break formation is obstructed regarding.