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HIGH-PURITY SHAPE-MEMORY ALLOY TARGET AND HIGH-PURITY SHAPE-MEMORY ALLOY THIN-FILM

机译:高纯度形状记忆合金靶材和高纯度形状记忆合金薄膜

摘要

PROBLEM TO BE SOLVED: To provide a shape-memory alloy that achieves dramatic improvement in etching characteristics of a shape-memory alloy, a shape-memory alloy target, and a shape-memory alloy thin-film.;SOLUTION: There are provided a high-purity shape-memory alloy, a high-purity shape-memory alloy target, and a high-purity shape-memory alloy thin-film, respectively, in which impurity components excluding constituent elements and gas components are ≤1,000 wt.ppm. In an Ni-Ti based shape-memory alloy and an Ni-Ti based shape-memory alloy target, an Al content and an Sn content are respectively ≤100 wt.ppm. In a Cu-Al based shape-memory alloy and a Cu-Al based shape-memory alloy target, an Ag content, an S content, and a Cl content are respectively ≤50 wt.ppm. In an Fe-Mn based shape-memory alloy and an Fe-Mn based shape-memory alloy target, an Al content and a Cr content are respectively ≤100 wt.ppm.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种形状记忆合金,该形状记忆合金在形状记忆合金,形状记忆合金靶材和形状记忆合金薄膜的蚀刻特性方面实现了显着改善。高纯度形状记忆合金靶材,高纯度形状记忆合金靶材和高纯度形状记忆合金薄膜,其中除组成元素和气体成分以外的杂质成分为1,000 wt.ppm 。在Ni-Ti基形状记忆合金和Ni-Ti基形状记忆合金靶中,Al含量和Sn含量分别为≤100wt.ppm。在Cu-Al基形状记忆合金和Cu-Al基形状记忆合金靶中,Ag含量,S含量和Cl含量分别为≤50wt.ppm。在Fe-Mn基形状记忆合金靶和Fe-Mn基形状记忆合金靶中,Al含量和Cr含量分别为100 wt.ppm。; COPYRIGHT:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP2009149990A

    专利类型

  • 公开/公告日2009-07-09

    原文格式PDF

  • 申请/专利权人 NIPPON MINING & METALS CO LTD;

    申请/专利号JP20080327664

  • 发明设计人 FUKUTANI TAKASHI;MIYASHITA HIROHITO;

    申请日2008-12-24

  • 分类号C23C14/34;C22C19/03;C22C9/06;C22C38/00;

  • 国家 JP

  • 入库时间 2022-08-21 19:42:35

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