首页> 外国专利> CUTTING METHOD OF MULTILAYER SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, LIGHT-EMITTING DEVICE, AND BACKLIGHT DEVICE

CUTTING METHOD OF MULTILAYER SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, LIGHT-EMITTING DEVICE, AND BACKLIGHT DEVICE

机译:多层基板的切割方法,半导体器件的制造方法,半导体器件,发光器件和背光器件

摘要

PROBLEM TO BE SOLVED: To cut, without generating burrs, a multilayer substrate wherein a first metal layer is formed on the front surface and a second metal layer is formed on the rear surface.;SOLUTION: The cutting method of multilayer substrate 2 with a metal layer 3 formed on the front surface and a rear surface electrode 4 formed on the rear surface includes a step of cutting the multilayer substrate 2 up to the intermediate part of thickness from the side of the metal layer 3 and the side of the rear surface electrode 4. A cut margin width in the side of the metal layer 3 is different from that in the side of the rear surface electrode 4.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:在不产生毛刺的情况下切割多层基板,其中在其前表面上形成第一金属层,在后表面上形成第二金属层。在表面上形成的金属层3和在背面上形成的背面电极4包括从金属层3的侧面和背面的侧面将多层基板2切割成厚度的中间部分的步骤。电极4。金属层3侧面的切边宽度不同于背面电极4的切边宽度。版权所有:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP2008288285A

    专利类型

  • 公开/公告日2008-11-27

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20070129791

  • 发明设计人 OTA KIYOHISA;

    申请日2007-05-15

  • 分类号H05K3/00;H01L23/02;H01L33/00;H05K3/46;

  • 国家 JP

  • 入库时间 2022-08-21 19:41:49

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