ELECTRODE FOR GaN-BASED LED DEVICE AND GaN-BASED LED DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based LED device wherein a transparent electrode is made of a TCO film with micro unevenness on its front surface and the optical reflectivity on the rear surface of a metal film for bonding pads can be also prevented from being degraded.;SOLUTION: An electrode for a GaN-based LED device is comprised of a transparent electrode 13 which is formed in contact with the surface of a GaN-based semiconductor film 12 and a metal film 14 which is formed as a bonding pad in a part on the transparent electrode 13. The transparent electrode 13 is made of a first TCO film 13a and a second TCO film 13b which are electrically connected with each other, and both the first TCO film 13a and the second TCO film 13b are exposed over the surface of the transparent electrode 13. The surface of the first TCO film 13a is smoother than that of the second TCO film 13b, and the metal film 14 is formed on the surface of the first TCO film 13a.;COPYRIGHT: (C)2009,JPO&INPIT