Being the seed crystal which is used in the silicon monocrystal pick-up due to silicon monocrystal pick-up breed

摘要

PROBLEM TO BE SOLVED: To provide a seed crystal for pulling a large diameter, high weight silicon single crystal, with which the productivity of the silicon single crystal can be improved without lowering the success ratio of the production of dislocation free crystal by diffusing an impurity such as boron or phosphorous into or applying a carbon film on the tip end part of the seed crystal for pulling the silicon single crystal.;SOLUTION: The seed crystal is used for pulling the silicon single crystal by a Czochralski method. In the seed crystal for pulling the silicon single crystal, an impurity diffusion layer wherein an impurity is diffused is formed in the surface of the tip end part at the side being brought into contact with a melt, and the inner layer of the impurity diffusion layer is an impurity non-diffusion layer.;COPYRIGHT: (C)2006,JPO&NCIPI