首页> 外国专利> High-speed optical and annealing process to low-temperature plasma deposition of a light-absorbing layer

High-speed optical and annealing process to low-temperature plasma deposition of a light-absorbing layer

机译:高速光学和退火工艺对光吸收层的低温等离子体沉积

摘要

A method for process a workpiece, the method includes the steps of introducing into the chamber containing the workpiece the light-absorbing material precursor gas by applying an RF source current is above the workpiece The at least partially absorbed by the light absorbing material layer, a step of generating an RF oscillation toroidal plasma current reentrant path that includes a process zone, depositing a layer of light-absorbing material on the workpiece, the workpiece I and a step that is exposed to light radiation that is. [Selection Figure 9
机译:一种用于加工工件的方法,该方法包括以下步骤:通过在工件上方施加RF源电流,将吸光材料前体气体引入容纳工件的腔室中。至少部分地被吸光材料层吸收。产生RF振荡环形等离子体电流折返路径的步骤,其包括处理区,在工件上沉积光吸收材料层,工件I是暴露于光辐射的步骤。 [选择图9

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号