Method of manufacturing a photonic crystal structure or SiGe / Si or Ge waveguide by selective growth

摘要

I to provide a method of forming a crystal quality low-loss waveguide. The methods of the invention include the method comprising: providing a substrate, and forming a dielectric layer on the substrate. Channel is formed by etching a portion of the dielectric layer. Selectively grown Si layer, the SiGe layer or the Ge layer is performed in the area that defines the channel. Furthermore, the method includes also be thermally annealed at a defined temperature range waveguide.