Techniques for patterning efficiently under-bump metal layer using a dry etch process

摘要

It can be patterned by the under bump metal laminate (105) on the basis (111) dry etching process, as compared with conventional techniques including wet chemical etch process very complex, to achieve a substantial advantage. In certain embodiments, a layer of suitable end of any other under-bump metal laminated or titanium-tungsten layer (105) (105B) is a plasma etch process using a physical component of oxygen chemicals and a fluorine-based can be etched on the basis (107). Furthermore, in order to remove particles (109) residue (112) before and after the (107) patterning process of plasma-based cleaning process of any (110, 113) may be performed.