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TECHNIQUE FOR EFFICIENTLY PATTERNING AN UNDERBUMP METALLIZATION LAYER USING A DRY ETCH PROCESS
TECHNIQUE FOR EFFICIENTLY PATTERNING AN UNDERBUMP METALLIZATION LAYER USING A DRY ETCH PROCESS
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机译:利用干刻蚀工艺有效地形成下凸金属化层的技术
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摘要
By patterning an underbump metallization layer stack (105) on the basis of a dry etch process (111), significant advantages may be achieved compared to conventional techniques involving a highly complex wet chemical etch process. In particular embodiments, a titanium tungsten layer or any other appropriate last layer (105B) of an underbump metallization layer stack (105) may be etched on the basis of a plasma etch process (107) using a fluorine-based chemistry and oxygen as a physical component. Moreover, appropriate cleaning processes (110, 113) may be performed for removing particles (109) and residues (112) prior to and after the plasma-based patterning process (107).
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