Emitting diode nanorod array structure having a nitride multiple quantum wells, a method of manufacturing the same, and nanorods

摘要

To provide an LED with high brightness, high luminous efficiency, a variety of emission spectrum very at the chip level than GaN light-emitting diode of the laminated film type [challenge] conventional (LED). Insert the multiple quantum well GaN barrier layers and InGaN layers are alternately stacked p-n junction surface SOLUTION: A p-n junction GaN nanorods, n-type GaN nanorods, multiple quantum wells, and p-type can be placed in an array of GaN nanorods formed by continuous in the longitudinal direction in this order GaN nanorods, to adjust the thickness and / or the In content of the InGaN layer. [Selection] Figure Figure 1