Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well

摘要

The present invention relates to a GaN light emitting diode. The GaN LED according to the present invention uses a GaN nanorod in which a multi quantum well formed by alternately stacking a plurality of InGaN layers and a plurality of GaN barriers is inserted into a p-n junction interface of a p-n junction GaN nanorod so that an n-type GaN nanorod, the multi quantum well, and a p-type GaN nanorod are sequentially arranged in a longitudinal direction. By arranging such GaN nanorods in an array, it is possible to provide an LED with higher luminance and higher light-emission efficiency as compared with a conventional laminated-film type GaN LED. It is possible to implement multi-color light with high luminance at a chip level by adjusting the amount of In and/or the thickness of the InGaN layers.