首页> 外国专利> The negative die resist constituent and pattern formation manner null consists of with the based polymer and the silicon content building a bridge medicine which include the epoxy ring of the semiconductor device which utilizes this

The negative die resist constituent and pattern formation manner null consists of with the based polymer and the silicon content building a bridge medicine which include the epoxy ring of the semiconductor device which utilizes this

机译:负模抗蚀剂的组成和图案的形成方式由与基础聚合物和硅含量构成的桥接药物组成,所述桥接药物包括利用该聚合物的半导体器件的环氧环

摘要

A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.
机译:提供了负性抗蚀剂组合物和使用该组合物的用于半导体器件的图案化方法。一方面,负型抗蚀剂组合物包括具有环氧基取代基的碱溶性基础聚合物,具有多个羟基的含硅交联剂和光酸产生剂。在另一方面,图案化方法包括在双层抗蚀剂工艺中使用负性抗蚀剂组合物以形成精细图案。

著录项

  • 公开/公告号JP4291041B2

    专利类型

  • 公开/公告日2009-07-08

    原文格式PDF

  • 申请/专利号JP20030139420

  • 发明设计人 崔 相俊;

    申请日2003-05-16

  • 分类号G03F7/038;C08G59/40;G03F7/004;G03F7/075;G03F7/26;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 19:38:24

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