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Crystal orientation measurement device and the crystal orientation measurement method

机译:晶体取向测定装置及晶体取向测定方法

摘要

PROBLEM TO BE SOLVED: To determine both of a peripheral direction standard and a slice surface by the measurement of a side surface with respect to a general crystal ingot wherein a crystal surface in a slice surface direction and a crystal surface to be measured in the side surface direction do not cross each other at a right angle.;SOLUTION: A measuring part 3 emitting X-rays to the side surface of a crystal ingot 1 to detect a crystal surface becoming maximum in the intensity of diffracted X-rays to measure the normal line direction thereof and a data processing part 15 for calculating a third crystal surface normal line ho almost parallel to an ω-axis 14 from first and second crystal surface normal lines hi, hn not parallel to each other measured at first and second rotary positions when the crystal ingot 1 is rotated around the ω-axis 14 being the axis thereof according to a spectrum formula by using the azimuth angle difference between the first and second crystal normal lines hi, hn known on polar coordinates wherein the third crystal surface normal line ho is an axis and the elevations of both normal lines hi, hn are provided.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:通过测量相对于普通晶体锭的侧面来确定周向标准和切片表面,其中,沿切片表面方向的晶体表面和要在侧面测量的晶体表面表面方向彼此不成直角相交;解决方案:测量部件3向晶锭1的侧面发射X射线,以检测晶体表面在衍射X射线强度方面达到最大,从而测量的法线方向和数据处理部分15,用于根据在第一旋转和第二旋转时测得的彼此不平行的第一和第二晶体表面法线hi,hn计算几乎平行于ω轴14的第三晶体表面法线ho通过使用第一晶体和第二晶体之间的方位角差,根据频谱公式,使晶锭1围绕ω轴14作为其轴旋转时的位置。在极坐标上已知的最细线hi,hn,其中第三晶体表面法线ho是轴,并且提供了两条法线hi,hn的高程。;版权:(C)2001,JPO

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