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ISOELECTRONIC SURFACTANT SUPPRESSION OF THREADING DISLOCATIONS IN METAMORPHIC EPITAXIAL LAYERS
ISOELECTRONIC SURFACTANT SUPPRESSION OF THREADING DISLOCATIONS IN METAMORPHIC EPITAXIAL LAYERS
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机译:变质表观层中旋电子位移的等电子表面活性剂抑制
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摘要
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.
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