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Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions
Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions
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机译:形成相变材料层图案的方法,制造相变存储器件的方法以及相关的浆料组合物
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摘要
In methods of forming a phase-change material layer pattern, an insulation layer having a recessed portion may be formed on a substrate, and a phase-change material layer may be formed on the insulation layer to fill the recessed portion. A first polishing process may be performed on the phase-change material layer using a first slurry composition to partially remove the phase-change material layer, the first slurry composition having a first polishing selectivity between the insulation layer and the phase-change material layer. A second polishing process may be performed on the phase-change material layer using a second slurry composition to form a phase-change material layer pattern in the recessed portion, the second slurry composition having a second polishing selectivity substantially lower than the first polishing selectivity.
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