METHOD OF FORMING PHASE-CHANGE MATERIAL LAYER PATTERN, METHOD OF MANUFACTURING PHASE-CHANGE MEMORY DEVICE, AND PHASE-CHANGE MATERIAL POLISHING SLURRY COMPOSITION FOR USE IN THE METHODS

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a phase-change material layer pattern, a method of manufacturing a phase-change memory device, and a phase-change material polishing slurry composition for use in the methods.;SOLUTION: In the method of forming the phase-change material layer pattern, an insulation layer having a recessed portion is formed on a substrate, and then a phase-change material layer is formed on the insulation layer while filling the recessed portion (S20). A first polishing step (S30) is performed on the phase-change material layer using a first slurry composition having a first polishing selectivity between the insulation layer and the phase-change material layer, and then a second polishing step (S40) is performed on the phase-change material layer using a second slurry composition having a second polishing selectivity lower than the first polishing selectivity to form a phase-change material layer pattern filling the recessed portion. Thus the occurrence of recessed portions on the phase-change material layer pattern or formation of a surface oxide film is suppressed to be able to considerably reduce the occurrence of defects in the phase-change memory device.;COPYRIGHT: (C)2009,JPO&INPIT