CAPACITOR HAVING Ru ELECTRODE AND TiO2 DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Provided are a capacitor of a semiconductor device using a TiO₂ dielectric layer and a method of fabricating the capacitor. The capacitor includes a Ru bottom electrode formed on a semiconductor substrate, an rutile-structures RuO₂ pretreated layer which is formed by oxidizing the Ru bottom electrode, a TiO₂ dielectric layer which has a rutile crystal structure corresponding to the rutile crystal structure of the RuO₂ pretreated layer and is doped with an impurity, and a top electrode formed on the TiO₂ dielectric layer. The method includes forming a Ru bottom electrode on a semiconductor substrate, forming a rutile-structured RuO₂ pretreated layer by oxidizing a surface of the Ru bottom electrode, forming a TiO₂ dielectric layer to have a rutile crystal structure corresponding to the rutile crystal structure of the RuO₂ pretreated layer on the a RuO₂ pretreated layer and doping the TiO₂ dielectric layer with an impurity, and forming a top electrode on the TiO₂ dielectric layer.