首页> 外国专利> FIELD EMITTER BASED ELECTRON SOURCE WITH MINIMIZED BEAM EMITTANCE GROWTH

FIELD EMITTER BASED ELECTRON SOURCE WITH MINIMIZED BEAM EMITTANCE GROWTH

机译:基于场发射器的电子源,具有最小的束发射增长

摘要

A system and method for limiting emittance growth in an electron beam is disclosed. The system includes an emitter element configured to generate an electron beam and an extraction electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extraction electrode including an opening therethrough. The system also includes a meshed grid disposed in the opening of the extraction electrode to enhance intensity and uniformity of an electric field at a surface of the emitter element and an emittance compensation electrode (ECE) positioned adjacent to the meshed grid on the side of the meshed grid opposite that of the emitter element and configured to control emittance growth of the electron beam.
机译:公开了一种用于限制电子束中的发射率增长的系统和方法。该系统包括配置为产生电子束的发射器元件和与发射器元件相邻定位以从中发射出电子束的引出电极,该引出电极包括穿过其中的开口。该系统还包括设置在引出电极的开口中以增强电场强度和均匀性的网状栅格,以及在网状栅格的侧面与网状栅格相邻设置的发射率补偿电极(ECE)。与发射器元件相对的网状栅格,并配置为控制电子束的发射率增长。

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