首页> 外国专利> Electron source on the basis of field emitters with minimized beam - emittance growth

Electron source on the basis of field emitters with minimized beam - emittance growth

机译:以场发射器为基础的电子源,具有最小的束-发射率增长

摘要

It is a method and a system for limited emittance growth in an electron beam (28) discloses. The system (10) contains an emitter element (26), which is arranged so that, an electron beam (28), and creating an extraction electrode (28), the adjacent to the emitter element (26) is arranged to the electron beam (28) to extract from this. The system (10) also contains a net-like grids (32), which in the opening (24) of the extraction electrode (20) is arranged, in order to achieve an intensity and uniformity of an electrical field to a surface of the emitter element (26) to enhance, and a compensation emittance - - electrode (ece) (34), the adjacent to the net-like grids (32) on the side of the net-like grid (33) opposite to the emitter element (26) is positioned and which is set up, an emittance growth of the electron beam (28) to control.
机译:公开了一种用于在电子束(28)中限制发射率增长的方法和系统。系统(10)包括发射器元件(26),该发射器元件被布置为使得电子束(28)和产生引出电极(28),与发射器元件(26)相邻的电子束被布置为(28)从中提取。系统(10)还包含网状栅格(32),其在引出电极(20)的开口(24)中布置,以便实现电场强度和电场均匀性。发射极元件(26),以增强和补偿发射率的电极(ece)(34),在与发射极元件相对的网状栅极(33)一侧上与网状栅极(32)相邻(26)被定位并被设置,以控制电子束(28)的发射率增长。

著录项

  • 公开/公告号DE102009003673A1

    专利类型

  • 公开/公告日2009-10-01

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20091003673

  • 发明设计人

    申请日2009-03-25

  • 分类号H01J1/304;H01J35/06;H01J35/30;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:01

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号