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Nanowire Crossbar Implementations of logic Gates using configurable, tunneling resistor junctions

机译:使用可配置的隧道电阻结的纳米线交叉开关逻辑门的实现

摘要

Various embodiments of the present invention are directed to nanowire crossbars that use configurable, tunneling resistor junctions to electronically implement logic gates. In one embodiment of the present invention, a method for implementing a logic gate comprises: providing a first layer of approximately parallel nanowires; interconnecting the first layer of approximately parallel nanowires with a second layer of approximately parallel nanowires through configurable, tunneling resistor junctions; selecting nanowires from among the first and second layer of nanowires to carry input and output electrical signals representing logical values; applying electrical signals representing input logical values to the input nanowires; and detecting an electrical signal representing an output logical value on the output nanowires.
机译:本发明的各种实施例针对使用可配置的隧道电阻结来电子地实现逻辑门的纳米线交叉开关。在本发明的一个实施例中,一种用于实现逻辑门的方法包括:提供近似平行的纳米线的第一层;通过可配置的隧穿电阻器结,将近似平行的纳米线的第一层与近似平行的纳米线的第二层互连;从第一和第二纳米线层中选择纳米线,以携带表示逻辑值的输入和输出电信号;将表示输入逻辑值的电信号施加到输入纳米线;检测在输出纳米线上的输出逻辑值的电信号。

著录项

  • 公开/公告号US2009189642A1

    专利类型

  • 公开/公告日2009-07-30

    原文格式PDF

  • 申请/专利权人 GREGORY S. SNIDER;

    申请/专利号US20090403094

  • 发明设计人 GREGORY S. SNIDER;

    申请日2009-03-12

  • 分类号H03K19/20;

  • 国家 US

  • 入库时间 2022-08-21 19:34:15

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