Nanowire crossbar implementations of logic gates using configurable, tunneling resistor junctions

摘要

Various embodiments of the present invention are directed to nanowire crossbars that use configurable, tunneling resistor junctions to electronically implement logic gates. In one embodiment of the present invention, a nanowire crossbar comprises two or more layers of approximately parallel nanowires, and a number of configurable, tunneling resistor junctions that each interconnects a nanowire in a first layer of approximately parallel nanowires with a nanowire in a second layer of approximately parallel nanowires.