首页> 外国专利> Bump Pad Metallurgy Employing An Electrolytic Cu / Electorlytic Ni / Electrolytic Cu Stack

Bump Pad Metallurgy Employing An Electrolytic Cu / Electorlytic Ni / Electrolytic Cu Stack

机译:电解铜/电解镍/电解铜堆的凸台冶金。

摘要

An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A photoresist is applied on both electroless Cu layers and lithographically patterned. First electrolytic Cu portions are formed on exposed surfaces of the electroless Cu layers, followed by formation of electrolytic Ni portions and second electrolytic Cu portions. The electrolytic Ni portions provide enhanced resistance to electromigration, while the second electrolytic Cu portions provide an adhesion layer for a solder mask and serves as an oxidation protection layer. Some of the first electrolytic Cu may be masked by lithographic means to block formation of electrolytic Ni portions and second electrolytic Cu portions thereupon as needed. Optionally, the electrolytic Ni portions may be formed directly on electroless Cu layers.
机译:在包含芯,至少一个前金属互连层和至少一个背面金属互连层的封装基板的每一侧上形成化学镀铜层。将光致抗蚀剂施加在两个化学镀铜层上并进行光刻构图。在无电解铜层的暴露表面上形成第一电解铜部分,然后形成电解镍部分和第二电解铜部分。电解Ni部分提供增强的抗电迁移性,而第二电解Cu部分提供用于阻焊层的粘合层并用作抗氧化保护层。某些第一电解铜可以通过光刻手段掩盖,以根据需要阻止在其上形成电解Ni部分和第二电解Cu部分。可选地,电解Ni部分可以直接形成在化学镀Cu层上。

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