首页> 外文会议>Electronic Packaging Technology Conference, 2005. EPTC 2005. Proceedings of 7th >Electromigration reliability of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
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Electromigration reliability of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy

机译:凸块冶金条件下含Ti / Ni(V)/ Cu的Sn-37Pb和Sn-3Ag-1.5Cu / Sn-3Ag-0.5Cu复合倒装芯片凸块的电迁移可靠性

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We examine electromigration fatigue reliability and morphological patterns of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite solder bumps in a flip-chip package assembly. The test vehicle is subjected to test conditions of five combinations of applied electric currents and ambient temperatures, namely, 0.4 A/150 /spl deg/C, 0.5 A/150 /spl deg/C, 0.6 A/125 /spl deg/C, 0.6 A/135 /spl deg/C, and 0.6 A/150 /spl deg/C. An electrothermal coupling analysis is employed to investigate the current crowding effect and maximum temperature in the solder bump in order to correlate with the experimental reliability using the Black's equation as a reliability model.
机译:我们研究了倒装芯片封装中Sn-37Pb和Sn-3Ag-1.5Cu / Sn-3Ag-0.5Cu复合焊料凸点的电迁移疲劳可靠性和形态模式。测试车辆要经受施加电流和环境温度的五种组合的测试条件,即0.4 A / 150 / spl℃/℃,0.5 A / 150 / spl℃/℃,0.6 A / 125 / spl℃/℃ ,0.6 A / 135 / spl deg / C和0.6 A / 150 / spl deg / C。电热耦合分析用于研究电流的拥挤效应和焊料凸点中的最高温度,以便使用布莱克方程作为可靠性模型将其与实验可靠性相关联。

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