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Flaw Detector and Flaw Detection Method For Silicon Layer of Wafer

机译:晶圆硅层缺陷检测仪及缺陷检测方法

摘要

The present invention is achieved for the purpose of easily detecting a crack or flaw existing in the silicon layer of a wafer in a short period of time. The flaw detector thus provided includes a coil sensor placed at a predetermined distance from the surface of the silicon layer; a radiofrequency applier for applying a radiofrequency to the coil sensor; a scanner for relatively moving the silicon layer and the coil sensor with a constant distance between the surface of the silicon layer and the coil sensor; and a crack detector for detecting a crack or flaw existing in the silicon layer by detecting the change of a signal provided from the coil sensor or the change in the radiofrequency applied by the radiofrequency applier. The frequency of the radiofrequency applied by the radiofrequency applier may be set between 5 MHz and 200 MHz. This enables a flaw detection for a silicon layer which has been considered to be impossible. In the case where the silicon to be flaw-detected is low resistivity silicon, the frequency applied may be set between 0.5 MHz and 200 MHz.
机译:为了容易在短时间内检测晶片的硅层中存在的裂纹或缺陷的目的而实现本发明。这样提供的探伤仪包括一个线圈传感器,该线圈传感器放置在距硅层表面预定距离处。射频施加器,用于向线圈传感器施加射频;扫描仪,用于使硅层和线圈传感器相对移动,并使硅层的表面和线圈传感器之间的距离恒定。裂纹检测器,其通过检测从线圈传感器提供的信号的变化或由射频施加器施加的射频的变化来检测硅层中存在的裂纹或缺陷。由射频施加器施加的射频的频率可以设置在5MHz和200MHz之间。这使得对于已经被认为不可能的硅层进行探伤成为可能。在要被探伤的硅是低电阻率的硅的情况下,可以将施加的频率设置在0.5MHz至200MHz之间。

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