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Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
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机译:用于编程不同大小的边距并在选择状态下进行补偿感应的系统,以改善非易失性存储器中的读取操作
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摘要
Non-volatile memory read operations compensate for floating gate coupling when the apparent threshold voltage of a memory cell may have shifted. A memory cell of interest can be read using a reference value based on a level of charge read from a neighboring memory cell. Misreading the neighboring cell may have greater effects in particular programming methodologies, and more specifically, when reading the neighboring cell for particular states or charge levels in those methodologies. In one embodiment, memory cells are programmed to create a wider margin between particular states where misreading a neighboring cell is more detrimental. Further, memory cells are read in one embodiment by compensating for floating gate coupling based on the state of a neighboring cell when reading at certain reference levels but not when reading at other reference levels, such as those where a wider margin has been created.
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