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METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS
METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS
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机译:用氢化物气相相滴定法沉积Ⅲ-Ⅴ族膜的方法和装置
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摘要
An improved method and apparatus for depositing a Group III-V for a hydride vapor phase epitaxy (HVPE) process are provided. In one embodiment, an apparatus for a hydride vapor phase epitaxy process may include an elongated body having a trough defined between a first and a second wall, a channel formed in the first wall configured to provide a gas to the trough, and an inlet port formed in the body coupled to the channel. In another embodiment, a method for a hydride vapor phase epitaxy process may include providing Group III metal liquid precursor in a container disposed in a chamber, flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber, and mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone.
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