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Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets
Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets
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机译:多曝光半导体制造掩模组以及制造这种多曝光掩模组的方法
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摘要
Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.
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