Thin film capacitor element composition, high permittivity insulation film, thin film capacitor element, thin film multilayer capacitor, and method of production of thin film capacitor element

摘要

A thin film capacitor element composition having a bismuth layered compound with a c-axis oriented substantially vertical to the substrate surface, wherein the bismuth layered compound is expressed by the formula (Bi₂O₂)²⁺(A_m−1B_mO_3m+1)²⁻ or Bi₂A_m−1B_mO_3M+3, the symbol m in the formula is an odd number, at least part of the Bi and/or A of the bismuth layered compound is substituted by a rare earth element, and the number of moles substituted by the rare earth element is larger than 1.0 and 2.8 or less with respect to the number of moles (m+1) of the total of Bi and A.