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Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
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机译:用于n-MOSFET的掺杂Yb的Ni全硅化低功函数栅电极的形成方法
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摘要
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
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